Reactive Ion Etching Plasma like in this equipment from PlasmaEtch is a dry etching technology using a chemically reactive plasma at low pressure. It presents the advantages of being directional, selective, and can make controlled alterations of the material properties. It can be used for the etching of soft and hard thin films for nano- and microstructuring as well as pre-deposition surface treatments.
- Plasma gases: Argon, Oxygen, CH4
- Maximum substrate size: 200 mm x 200 mm
- Picture in categories
- Cluster 1: Advanced instrumentation for top-down and bottom-up processing