Our site uses cookies necessary for its proper functioning. To improve your experience, other cookies may be used: you can choose to disable them. This can be changed at any time via the Cookies link at the bottom of the page.


Université de Bordeaux
ELORPrintTecEquipment of Excellence
Cluster of excellence
 

A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors

A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors

Multiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In2O3 thin film transistors, which results in overall improvement of device performance. This approach not only reduces off-current of the device by more than two orders of magnitude, but also leads to a threshold voltage reduction, as well as significantly enhances the mobility through facilitated charge injection from the electrode to the active layer. Such a mechanism has been elucidated through morphological and spectroscopic studies.

A. Kyndiah, A. Ablat, S. Guyot-Reeb, T. Schultz, F. Zu, N. Koch, P. Amsalem, S. Chiodini, T. Yilmaz Alic, Y. Topal, M. Kus, L. Hirsch, S. Fasquel & M. Abbas


Scientific Reports volume 8, Article number: 10946 (2018)

Picture in categories