Evidence of band bending induced by hole trapping at MAPbI3 perovskite/metal interface

Electron injection by tunneling from a gold electrode and hole transport properties in polycrystalline MAPbI₃ has been investigated using variable temperature experiments and numerical simulations. The presence of a large and unexpected band bending at the Au/MAPbI₃ interface is revealed and attributed to the trapping of holes, which enhances the injection of electrons via tunneling. These results elucidate the role of volume and interface defects in state-of-the-art hybrid perovskite semiconductors.

Y.-F. CHEN, Y.-T. TSAI, D. M. BASSANI, R. CLERC, D. FORGÁCS, H. J. BOLINK, M. WUSSLER, W. JAEGERMANN, G. WANTZ, L. HIRSCH

Journal of Materials Chemistry A, issue 44, 17529-17536 (2016)