Mechanical strain induced changes in electrical characteristics of flexible, non-volatile ferroelectric OFET based memory
Investigation of mechanical strain on the electrical characteristics of ferroelectric OFET base memory is crucial for novel flexible printed circuit. In this regards, the effects of compressive and tensile strain applied in parallel, 45° angle and perpendicular to the semiconductor channel were studied showing critical consideration to be taken into account before designing flexible memories.
D. Thuau, M. Abbas, G. Wantz, L. Hirsch, I. Dufour, C. Ayela
Organic Electronics, Volume 40, January 2017, Pages 30-35