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Investigation of mechanical strain on the electrical characteristics of
ferroelectric
OFET base memory is crucial for novel flexible printed
circuit
. In this regards, the effects of compressive and
tensile strain
applied in parallel, 45° angle and perpendicular to the semiconductor channel were studied showing critical consideration to be taken into account before designing flexible...
Scientific PublicationsMonday 21 October 2019 by AudeMANSON. Last update Monday 21 October 2019
21/01/2011 - Le Figaro - 52 projets d'équipements scientifiques financés par le grand empruntHomepage5 Mega bytesPress releasesFriday 10 April 2015 by CarolinePITOIS. Last update Friday 18 October 2019
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